|
Vol. 29 - nº
4 - December - 1999
Special Issue: Proceedings of the 9th Brazilian Workshop
on Semiconductor Physics'98
Foreword
|
| PAGES |
ARTICLES |
| 611-615 |
"Ab
Initio" Studies of Hydrogen-Enhanced Oxygen Diffusion in Silicon
R.B. Capaz, L.V.C. Assali, L.C. Kimerling,
K. Cho, and J.D. Joannopoulos |
| 616-622 |
Erbium
in a-Si:H
Leandro R. Tessler |
| 623-626 |
Metal-Insulator
Transition in Two Dimensions
S.V.Kravchenko |
| 627-638 |
Nonlinear
Spatio-Temporal Dynamics in Semiconductors
Eckehard Schöll |
| 639-642 |
Spin
Depolarization in Quantum Dots
A.S.Sachrajda, C. Gould, P. Hawrylak, Y. Feng,
P. Zawadzki and Z. Wasilewski |
| 643-651 |
Ab
Initio Calculation of Linear and Nonlinear Optical Properties of Semiconductor
Structures
F. Bechstedt, B. Adolph and W. G. Schmidt |
| 652-660 |
Minibands
and Wannier-Stark Ladders in Semiconductor Superlattices Studied by Infrared
Spectroscopy
M. Helm, W. Hilber, G. Strasser, R. DeMeester
and F. M. Peeters |
| 661-669 |
An
Order-N Study of Dislocations in Homopolar Semiconductors
R.W. Nunes |
| 670-674 |
Electric
Field Effects on the Confinement Properties of GaN/Alx Ga1-xN
Zincblende and Wurtzite Nonabrupt Quantum Wells
H. Wang, G. A. Farias, and V. N. Freire |
| 675-678 |
Cyclotron
Mass of Electrons in GaN-AlxGa1-xN Heterostructures
Solemar Silva Oliveira, Marcio Adriano R. Souza,
Antonio Newton Borges, and Francisco A. Pinto Osório |
| 679-684 |
Interband
Magneto-Absorption in Narrow-Gap Semiconductor Quantum Wells
V. López-Richard, G. E. Marques, and C. Trallero-Giner |
| 685-689 |
Evolution
of Dynamic Localization Regimes in Coupled Minibands
P.H. Rivera and P.A. Schulz |
| 690-693 |
Ambipolar
Carrier Diffusion in In0.53Ga0.47As Single Quantum
Wells
A.F.G. Monte, S.W. da Silva, J.M.R. Cruz, P.C.
Morais, and H.M. Cox |
| 694-701 |
A
Quantum Formalism for a Terahertz Acoustic Laser
Ihosvany Camps Rodríguez, Sergio Saul Makler,
and Enrique Victoriano Anda |
| 702-706 |
Spin-flip
Scattering Contribution to Resonant-Tunneling Current in Semimagnetic
Semiconductor Heterostructures
V. A. Chitta, M. Z. Maialle, S. A. Leão, and
M. H. Degani |
| 707-710 |
High
Magnetic Field Transport and Photoluminescence in Doped InGaAs/InP Superlattices
A. B. Henriques, L. K. Hanamoto, R. F. Oliveira,
P. L. Souza, L. C. D. Gonçalves, and B. Yavich |
| 711-714 |
Magnetotransport
in a Spatially Modulated Magnetic Field
G.M. Gusev, A.A. Quivy, J.R. Leite, A.A. Bykov,
N.T. Moshegov, V.M. Kudryashev, A.I. Toropov, and Yu.V. Nastaushev |
| 715-718 |
Quantum
Hall Effect in a Wide Parabolic Quantum Well
G.M. Gusev, J.R. Leite, E.B. Olshanetskii,
D.K. Maude, M. Cassé, J.C. Portal, N.T. Moshegov, and A.I. Toropov |
| 719-722 |
Spin-Dependent
Resonant Tunneling in Semiconductor Nanostructures
Erasmo A. de Andrada e Silva and Giuseppe C.
La Rocca |
| 723-726 |
Temperature
Dependence of the Absorption Coefficient in Doped Quantum Wells
M.R. Baldan, R.M. Serra, P.D. Emmel, and A.
Ferreira da Silva |
| 727-729 |
Stochastic
Dynamics of 2D Electrons in Antidot Lattice in the Presence of an in--Plane
Magnetic Field
N.M. Sotomayor Choque, M.T. dos Santos, G.M.
Gusev, J.R. Leite, and Z.D. Kvon |
| 730-733 |
Electronic
Structure in Narrow-Gap Quantum Dots
S.
J. Prado, G. E. Marques, and C.Trallero-Giner |
| 734-737 |
Inelastic
Coulomb Scattering Rate of a Multisubband Q1D Electron Gas
M. Tavares and G.-Q. Hai |
| 738-741 |
Electronic
Coupling and Thermal Relaxation in Self-assembled InAs Quantum Dot Superlattices
E. Petitprez, N.T. Moshegov, E. Marega Jr.,
P. Basmaji, A. Mazel, D. Dorignac, and R. Fourmeaux |
| 742-745 |
Metal-Insulator
Transition at B=0 in an AlGaAs/GaAs Two-Dimensional
Electron Gas under the Influence of InAs Self-Assembled Quantum Dots
E. Ribeiro, R. Jäggi, T. Heinzel, K. Ensslin,
G. Medeiros-Ribeiro, and P.M. Petroff |
| 746-750 |
Strain
and Relaxation Processes in In1-xGaxAsyP1-y/InP
Single Quantum Wells Grown by LP-MOVPE
A.A. Bernussi, W.Carvalho Jr., M.T. Furtado,
and A.L. Gobbi |
| 751-755 |
Influence
of Laser Excitation on Raman and Photoluminescence Spectra and FTIR Study
of Porous Silicon Layers
Walter Jaimes Salcedo, Francisco J. Ramirez
Fernandez, and Joel C. Rubimc |
| 756-759 |
Environment
of Er in a-Si:H: Co-Sputtering Versus Ion Implantation
Cínthia Piamonteze, Leandro R. Tessler, M.
C. Martins Alves, and H. Tolentino |
| 760-763 |
Electrochemical
Characterization on Semiconductors p-Type CVD Diamond Electrodes
N.G. Ferreira, L.L.G. Silva, E. J. Corat, V.J.
Trava-Airoldi, K. Iha |
| 764-767 |
Size
Effects on the Growth Mode and Roughness of Sub-Micron Structures Grown
by Selective Area Epitaxy
H.R. Gutiérrez, M.A. Cotta, W.M. Nakaema, M.M.G.de
Carvalho, and A.L. Gobbi |
| 768-770 |
Plasma
Ion Implantation of Nitrogen into Silicon: High Resolution X-ray Diffraction
A. F. Beloto, E. Abramof, M. Ueda, L.A. Berni,
and G.F. Gomes |
| 771-774 |
Band
Crossing Evidence in PbSnTe Observed by Optical Transmission Measurements
S.O. Ferreira, E. Abramof, P. Motisuke, P.H.O.
Rappl, H. Closs, A.Y. Ueta, C. Boschetti, and I.N. Bandeira |
| 775-778 |
Quasi-Fermi
Levels, Chemical and Electric Potential Profiles of a Semiconductor Under
Illumination
A.M. dos Santos, D. Beliaev, L.M.R. Scolfaro,
and J.R. Leite |
| 779-784 |
A
Tight-Binding Study of Acceptor Levels in Semiconductors
J. G. Menchero |
| 785-789 |
High
Temperature Behavior of Subpicosecond Electron Transport Transient in
3C- and 6H-SiC
E.F. Bezerra, E.W.S. Caetano, V.N. Freire,
E.F. da Silva Jr., and J.A.P. da Costa |
| 790-792 |
SXS
and XPS Study of the Adsorption and Desorption of Te on GaAs (100)
J.C. González, W.N. Rodrigues, C.M. Silva,
M.V.B. Moreira, A.G. de Oliveira, M. Abbate, and F.C. Vicentin |
| 793-796 |
Impurity
Breakdown in GaAs Samples Grown by Molecular Beam Epitaxy
R.M. Rubinger, A.G. de Oliveira, G.M. Ribeiro,
J.C. Bezerra, C.M. Silva, W.N. Rodrigues, and M.V.B. Moreira |
| 797-800 |
Observation
of Low Frequency Oscillations in GaAs Samples Grown by Molecular Beam
Epitaxy at Low Temperatures
R.M. Rubinger, A.G. de Oliveira, G.M. Ribeiro,
D.A.W. Soares and M.V.B. Moreira |
| 801-805 |
Atomic
Geometry and Energetics of Native Defects in Cubic Boron Nitride
W. Orellana and H. Chacham |
| 806-809 |
Experimental
Evidence for the Distinction Between Metastability and Persistence in
Optical and Electronic Properties of Bulk GaAs and AlGaAs
M.V.B Pinheiro and K. Krambrock |
| 810-813 |
Theoretical
Study of Surfactant Action of Te on Si(001)/Ge Surfaces
R.H. Miwa and E.K. Takahashi |
| 814-816 |
Theoretical
Study of Si(001)/Te - (1x1), (2x1) and (3x1) Surfaces
R. H. Miwa and A. C. Ferraz |
| 817-822 |
Ab
Initio Theoretical Studies of Atomic and Electronic Structures of III-Nitride
(110) Surfaces
H.W. Leite Alves, J.L.A. Alves, R.A. Nogueira,
and J.R. Leite |
| 823-827 |
Tellurium
- Modified Surface States of GaAs(001) and InAs(001)
R. Claudino da Silva and A. C. Ferraz |
| 828-830 |
Vacancy
Diffusion in Silicon: Analysis of Transition State Theory
R. R. Gattass, Belita Koiller, and R. B. Capaz |
| 831-833 |
Dynamics
of Internal Electric and Phonon Fields in n-GaAs Pumped with Ultrashort
Pulses
Fabrício M. Souza and J. Carlos Egues |
| 834-838 |
Quantum
Well to Quantum Wire Crossover in AlAs/GaAs/AlAs Heterostructures Induced
by Interface Roughness Increase
T.G. Dargam, R.B. Capaz, and Belita Koiller |
| 839 |
Morphological,
Optical and Structural Properties of Zero-Net-Strained InGaAsP/InP Structures
Grown by LP-MOVPE for 1.55$\mu$m Laser Applications
Wilson de Carvalho Jr, Ayrton André Bernussi,
Mario Tosi Furtado, Angelo Luiz Gobbi, and Mônica Cotta |