Vol. 26 - nº 1 - March - 1996

SPECIAL SECTION: PROCEEDINGS OF THE
7th BRAZILIAN WORKSHOP ON SEMICONDUCTOR PHYSICS
held in Rio de Janeiro, 16 - 21 July, 1995


The first Brazilian School on Semiconductor Physics took place in Campinas, São Paulo, in 1983. It was really a School, with tutorial presentations aiming to develop this strategic field of research in Brazil. In 1993, it was clear for the participants and organizers of the Sixth Brazilian School on Semiconductor Physics in São Carlos, that Semiconductor Physics in Brazil had developed and was beginning to flourish. Along 10 years this event changed to became a dynamic Workshop where research in Semiconductor Physics carried out in different institutions was presented and discussed among colleagues. The Committee in charge of this Seventh event of the series agreed that the name should reflect this new reality, therefore the change of "School'' into "Workshop".

The interplay between basic science and technological achievements manifests itself in a most emphatic and fruitful manner in Semiconductor Physics. Transistors in computers and semiconductor lasers in telecommunications are only two textbook examples. New states of matter in confined form, miniaturization, energy efficient, environment friendly and low cost applications are developments of semiconductor research. The emphasis of the program of the BWSP-7 was on properties and applications of low dimensional systems. We learned a lot from those who are conceiving and are leading the research in a variety of fields, so the spirit of the School of Semiconductors is still present.

Three hundred participants came to this Brazilian event. We received 250 participants from Brazilian institutions and 50 from abroad. The BWSP-7 was also an opportunity for us to shape and strengthen national and international scientific collaboration projects.

There was however a significant absence in this Workshop, a friend and uncompromising supporter of this series of Brazilian events in Semiconductor Physics, and of many others. Professor Leo Falicov, an outstanding teacher and scientist, was here for the First Brazilian School on Semiconductor Physics. He was supposed to be back for BWSP-7. He encouraged and enthusiastically helped the initial steps towards the organization of this Workshop. But Leo Falicov passed away in January 1995, with only 61 years of age. Leo also contributed to the infrastructure of Science and to define scientific policy at the national (US) and international levels. He always kept strong ties with Latin America, and was here for the last time in 1994 at the Condensed Matter Meeting of the Brazilian Physical Society, in Caxambu. He loved Rio, he was counting to come to this Brazilian Workshop.

We are particularly pleased with the timely publication of these Proceedings, eight months after the Workshop. We thank the invited and contributing authors for preparing their manuscripts, and our colleagues in the Program Committee for their active involvement in the refereeing procedures.

Guest Editors:

Belita Koiller and Sergio S. Camargo Jr.
Universidade Federal do Rio de Janeiro

PAGES

ARTICLES

 Invited Lectures and Papers

07-20

The Electronic Properties and Applications of Quantum Wells and Superlattices of III-V Narrow Gap Semiconductors
R. A. Stradling
21-42 The Development of Concepts in Light-Emitting Devices
C. Weisbuch
43-57 Compressible Strips, Chiral Luttinger Liquids, and All That Jazz
A. H. MacDonald
58-67 The Almost-Magical World of Photonic Crystals
J. D. Joannopoulos
68-74 Double Layer Two Dimensional Electron Systems at High Magnetic Field
J. P. Eisenstein
75-82 Kinetic Roughening in Molecular Beam Epitaxy of InP
M. A. Cotta, R. A. Hamm, S. N. G. Chu, R. Hull, L. R. Harriott, H. Temkin
83-94 Quantitative HRTEM: A Novel Approach Towards Application Oriented Basic Research
C. Kisielowski, Z. Liliental-Weber, E. R. Weber
95-99 Time and Space Resolved Spectroscopy of Single Semiconductor Quantum Dots
Ph. Roussignol, U. Bockelmann, A. Filoramo, W. Heller
100-109 Physics and Applications of Mesoscopic Structures
P. Omling, N. Carlsson, K. Deppert, B. Kowalski, H. Linke, M.S. Miller, P. Ramvall, L. Samuelson, W. Seifert
110-122 Quantum Wires and Quantum Dots in Heterojunction Devices with Field-Effect Electrodes
W. Hansen, D. Schmerek, H. Drexler
123-127 Graphitic Nanotubes and Aligned Nanotubes Films
D. Ugarte, W. S. Bacsa, B. Doudin, L. Forro, W. A. de Heer
128-136 Quantum Well Electro-Optic Effects and Novel Device Applications
J. E. Zucker
137-143 Photovoltaic Solar Energy Conversion
M. A. Green
144-150 Spin-orbit Splitting in the Conduction Subband of Semiconductor Asymmetric Heterostructures
E. A. de Andrada e Silva
151-162 Porous Silicon: Silicon Quantum Dots for Photonic Applications
L. Pavesi, R. Guardini
163-168 Defects, Impurities and Doping Levels in Wide-Band-Gap Semiconductors
C. G. Van de Walle, J. Neugebauer

Phonons and Raman
169-172 Optical Phonons of Superlattice Phases in Spontaneously Ordered Semicondutcor Alloys
A. M. Mintairov
173-176 Infrared and Raman Spectroscopies of Plasmon Anisotropy in Heavily Doped GaAs/AlAs Superlattices
Yu. A. Pusep, M. T. O. Silva, J. C. Galzerani, A. G. Milekhin, N. T. Moshegov, A. I. Toropov
177-181 Nonparabolicity Effects on Transition Rates Due to Confined Phonons in Quantum Wells
A. M. Alcalde, G. Weber
182-188 Second Order Resonant Raman Scattering
A. García-Cristóbal, A. Cantarero, C. Trallero-Giner
 
Optical Properties
189-192 Light - Stimulated Anisotropy in Porous Silicon
G. Polisski, A. V. Andrianov, D. Kovalev, F. Koch
193-197 Intraband Ultrafast Relaxation in CdTe Quantum Dots Dispersed in a Glass Matrix
R. E. Marotti, S. Tsuda, C. H. de Brito Cruz
198-201 Exciton Green's Function Approach to Absorption in II-VI Semiconductor Quantum Wells
A. Camacho, M. E. Ramirez, F. J. Rodriguez, L. Quiroga
202-204 Effects of Periodic Gate Potentials on Quasi-1D Excitons
G. H. Cocoletzi,S. E. Ulloa
205-210 Remarks on the Role of Excitonic Renormalization in the Metal-Insulator Transition
M. A. Continentino, G. M. Japiassú, A. Troper
211-213 Local Magnetoplasmon Modes of a Semiconductor Superlattice with Broken Translational Symmetry
J. C. Granada E.
214-218 Surface Exciton Polariton Spectrum in Semiconductor Superlattices
E. L. Albuquerque, P. Fulco
219-221 Polaron Effects on Cyclotron Mass due to Interface and Slab Phonons in GaAs/AlGaAs Quantum Wells
Guo-Qiang Hai, N. Studart, F. M. Peeters
222-224 Extremely Long Spin-Relaxation of Excitons Localized in GaAs/AlGaAs Coupled Quantum Well Structures
A. L. C. Triques, A. Vinattieri, M. Colocci, R. Ferreira, P. Roussignol
225-228 Electron-Hole Recombination in GaAs: Si Superlattices in High Magnetic Fields
A. B. Henriques, V. Bindilatti, N. F. Oliveira, Jr., D. Heiman
229-233 Effects of Electric and Magnetic Fields on the 1s --->2p+ Donor Transitions in Quantum Wells
F. J. Ribeiro, L. H. M. Barbosa, A. Latgé
234-238 Local Field Optical Effects in Two-Dimensional Quantum Confined Structures
A. V. Ghiner, G. I. Surdutovich
239-244 Light and Thermal Excitation of Depolarization Current in Indirect Bandgap AlxGa1-xAs
L. V. A. Scalvi, L. Oliveira, M. Siu Li
245-248 Theory of the Spin Relaxation of Photoexcited Carriers in Doped GaAs Quantum Wells
M. Z. Maialle
249-251 Room-Temperature Photoluminescence Measurements in InP-InGaAs Single Asymmetric Quantum Well
A. J. C. Cardoso, P.C. Morais, H. M. Cox
252-258 New Improved Technique to Measure Photoreflectance
M. Pamplona Pires, P. L. Souza, J. P. von der Weid
 
Growth and Characterization
259-262 Study of Surface Kinetic Effects in the MBE Growth of III-V Compounds by RHEED Analysis
D. I. Lubyshev, P. P. Gonzalez-Borrero, E. Marega Jr, T. B. Lubysheva, N. La Scala Jr., P. Basmaji
263-270 Influence of Surface Structure on Segregation and Alloy Properties in (100)- and (311)-Oriented InGaAs/GaAs Heterostructures
F. E. G. Guimarães, P. P. González-Borrero, D. Lubyshev, P. Basmaji
 
Surfaces and Interfaces
271-273 Atomic Structures of CdTe and CdSe (110) Surfaces
K. Watari, J. L. A. Alves, A.C. Ferraz
274-276 CuInSe2: Electronic States for the Ideal Surfaces (100) and (112)
J. A. Rodríguez, L. Quiroga, A. Camacho, R. Baquero
277-279 The Interaction of Atoms with GaAs[110] Surface using Local Softness Model
P. Piquini, A. Dal Pino Jr., A. Fazzio
280-284 Shear Friction and Elastic Breakdown of Strained Layers
M. R. Baldan, E. Granato
 
Transport Properties
285-288 Investigations of Electron Wave Interference and Quantum Chaos in Ballistic Quantum Dots with Square Geometry
J. P. Bird, K. Ishibashi, R. Newbury, D. M. Olatana, R. P. Taylor, Y. Ochiai, Y. Aoyagi, T. Sugano
289-293 Resonant Tunneling of Electrons in Asymmetric Double Quantum Wells Under Crossed Electric and Magnetic Fields
M. A. R. Souza, V. A. Chitta
294-297 Magnetotunneling Studies in a Pseudomorphic InGaAs/AlAs/GaAs Heterostructure
Y. Galvão Gobato, J.M. Berroir, Y. Guldner, B. Vinter, J. Nagle, P. H. Rivera
298-303 Chaos Induced by Magnetic Field in Asymmetric Double Barrier Resonant Tunneling Structures
F. Claro, P. Orellana, E. Anda
304-307 Analysis of the Current-Voltage Characteristics Lineshapes of Resonant Tunneling Diodes
P. H. Rivera, P. A. Schulz
308-312 Local Lattice Mode - Induced Far-Infrared Selective Photoconductivity in PbTe(Ga)
A. I. Belogorokhov, I. I. Ivanchik, D. R. Khokhlov, S. Ponomarev
313-317 2D Electron Transport in Selectively Doped GaAs/InxGa1-xAs Multiple Quantum Well Structures
V. A. Kulbachinskii, V. G. Kytin, T. S. Babushkina, I. G. Malkina
318-322 Electronic Structures of Modulated Bidimensional Systems in the Presence of a Magnetic Field
M. A. Andrade Neto, P. A. Schulz
323-326 Combined Effect ofImpurities and Phonon Scattering in the Magnetic Transport: Diffusive Pole Approximation
C. E. Leal, I. C. da Cunha Lima, M. R. Baldan, A. Troper
327-332 Sample Parameters of Degenerate Semiconductor Superlattices
A. B. Henriques, L. C. D. Gonçalves, P. L. de Souza, B. Yavich
333-336 Electron Mobilities in Single and Double delta-Layers
Guo-Qiang Hai, N. Studart
337-340 Self-Consistent Calculation of the Electronic Properties of Quantum Well Wires
S. A. Leão, M. H. Degani
341-346 Device Noise as a Probe of Electron Motion in Quantum Dots at High Magnetic Fields
J. P. Bird, K. Ishibashi, Y. Aoyagi, T. Sugano
 
Amorphous Materials and Defects
347-352 Bistable Photogenerated Effects in Low Resistivity GaAs
W. V. Machado, A. F. S. Landim, M. A. Amato
353-358 Nitrogen Implantation Into Amorphous Carbon Films: SIMS and Positron Annihilation Analyses
F. L. Freire Jr., D. F. Franceschini, C. A. Achete, I. J. R. Baumvol, R. S. Brusa, G. Mariotto R. Canteri
359-362 Conductivity and ESR Measurements on Carbon Rich Cathodic Amorphous Silicon Carbon Alloys
A. L. Baia Neto, F. Finger, S. S. Camargo Jr.
363-368 a-SixGe1-x:H thin Films
M. Mulato, I. Chambouleyron
 
Heterostructures and Superlattices
369-371 Quantum Size Effects and Localization Lengths in Disordered Heterostructures
R. Rey-Gonzalez, P. A. Schulz
372-375 Far-Infrared-Study of Shallow Etched Quantum Wires on High Mobility GaAs/AlGaAs Heterostructures
V. RolBkopf, E. Gornik, C. M. Engelhardt, G.Böhm, G. Weimann
376-380 Optical Spectra of a Cantor Superlattice
M. S. Vasconcelos, E. L. Albuquerque, A. M. Mariz
381-387 Stability and Electronic Structure of Superlattices (IIIV)n/(IV2)N
D. Casagrande, A. C. Ferraz
388-391 Kinetic Energy Operators and Electron Transmission in Nonabrupt Heterojunctions
J. Ribeiro Filho, G. A. Farias, V. N. Freire
392-396 Metastability in Periodically delta-doped GaAs
T. M. Schmidt, A. Fazzio
 
Devices
397-400 Light-Induced Degradation in a-Si:H P-I-N Solar Cells
H. Paes Jr., W. Losch
401-405 Effects of High Doses of Ionizing Radiation on Interface Properties of MOS Capacitors
E. A. de Vasconcelos, E. F. da Silva, Jr.
406 Characterization of PbTe Epitaxial Layers Grown on BaF2/CaF2/Si Structures
C. Boschetti, E. Abramof, P. H. O. Rappl, I. N. Bandeira, P. Motisuke, M. A. Hayashi, L. P. Cardoso