Vol. 26 - nº 1 - March - 1996 SPECIAL SECTION: PROCEEDINGS OF THE
The interplay between basic science and technological achievements manifests itself in a most emphatic and fruitful manner in Semiconductor Physics. Transistors in computers and semiconductor lasers in telecommunications are only two textbook examples. New states of matter in confined form, miniaturization, energy efficient, environment friendly and low cost applications are developments of semiconductor research. The emphasis of the program of the BWSP-7 was on properties and applications of low dimensional systems. We learned a lot from those who are conceiving and are leading the research in a variety of fields, so the spirit of the School of Semiconductors is still present. Three hundred participants came to this Brazilian event. We received 250 participants from Brazilian institutions and 50 from abroad. The BWSP-7 was also an opportunity for us to shape and strengthen national and international scientific collaboration projects. There was however a significant absence in this Workshop, a friend and uncompromising supporter of this series of Brazilian events in Semiconductor Physics, and of many others. Professor Leo Falicov, an outstanding teacher and scientist, was here for the First Brazilian School on Semiconductor Physics. He was supposed to be back for BWSP-7. He encouraged and enthusiastically helped the initial steps towards the organization of this Workshop. But Leo Falicov passed away in January 1995, with only 61 years of age. Leo also contributed to the infrastructure of Science and to define scientific policy at the national (US) and international levels. He always kept strong ties with Latin America, and was here for the last time in 1994 at the Condensed Matter Meeting of the Brazilian Physical Society, in Caxambu. He loved Rio, he was counting to come to this Brazilian Workshop. We are particularly pleased with the timely publication of these Proceedings, eight months after the Workshop. We thank the invited and contributing authors for preparing their manuscripts, and our colleagues in the Program Committee for their active involvement in the refereeing procedures. Guest Editors: Belita Koiller and Sergio S. Camargo
Jr.
Universidade Federal do Rio de Janeiro |
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PAGES |
ARTICLES |
Invited Lectures and Papers | |
07-20 |
The
Electronic Properties and Applications of Quantum Wells and Superlattices
of III-V Narrow Gap Semiconductors R. A. Stradling |
21-42 | The
Development of Concepts in Light-Emitting Devices C. Weisbuch |
43-57 | Compressible
Strips, Chiral Luttinger Liquids, and All That Jazz A. H. MacDonald |
58-67 | The
Almost-Magical World of Photonic Crystals J. D. Joannopoulos |
68-74 | Double
Layer Two Dimensional Electron Systems at High Magnetic Field J. P. Eisenstein |
75-82 | Kinetic
Roughening in Molecular Beam Epitaxy of InP M. A. Cotta, R. A. Hamm, S. N. G. Chu, R. Hull, L. R. Harriott, H. Temkin |
83-94 | Quantitative
HRTEM: A Novel Approach Towards Application Oriented Basic Research C. Kisielowski, Z. Liliental-Weber, E. R. Weber |
95-99 | Time
and Space Resolved Spectroscopy of Single Semiconductor Quantum Dots Ph. Roussignol, U. Bockelmann, A. Filoramo, W. Heller |
100-109 | Physics
and Applications of Mesoscopic Structures P. Omling, N. Carlsson, K. Deppert, B. Kowalski, H. Linke, M.S. Miller, P. Ramvall, L. Samuelson, W. Seifert |
110-122 | Quantum
Wires and Quantum Dots in Heterojunction Devices with Field-Effect Electrodes
W. Hansen, D. Schmerek, H. Drexler |
123-127 | Graphitic
Nanotubes and Aligned Nanotubes Films D. Ugarte, W. S. Bacsa, B. Doudin, L. Forro, W. A. de Heer |
128-136 | Quantum
Well Electro-Optic Effects and Novel Device Applications J. E. Zucker |
137-143 | Photovoltaic
Solar Energy Conversion M. A. Green |
144-150 | Spin-orbit
Splitting in the Conduction Subband of Semiconductor Asymmetric Heterostructures
E. A. de Andrada e Silva |
151-162 | Porous
Silicon: Silicon Quantum Dots for Photonic Applications L. Pavesi, R. Guardini |
163-168 | Defects,
Impurities and Doping Levels in Wide-Band-Gap Semiconductors C. G. Van de Walle, J. Neugebauer |
Phonons and Raman |
|
169-172 | Optical
Phonons of Superlattice Phases in Spontaneously Ordered Semicondutcor
Alloys A. M. Mintairov |
173-176 | Infrared
and Raman Spectroscopies of Plasmon Anisotropy in Heavily Doped GaAs/AlAs
Superlattices Yu. A. Pusep, M. T. O. Silva, J. C. Galzerani, A. G. Milekhin, N. T. Moshegov, A. I. Toropov |
177-181 | Nonparabolicity
Effects on Transition Rates Due to Confined Phonons in Quantum Wells A. M. Alcalde, G. Weber |
182-188 | Second
Order Resonant Raman Scattering A. García-Cristóbal, A. Cantarero, C. Trallero-Giner |
Optical Properties |
|
189-192 | Light
- Stimulated Anisotropy in Porous Silicon G. Polisski, A. V. Andrianov, D. Kovalev, F. Koch |
193-197 | Intraband
Ultrafast Relaxation in CdTe Quantum Dots Dispersed in a Glass Matrix
R. E. Marotti, S. Tsuda, C. H. de Brito Cruz |
198-201 | Exciton
Green's Function Approach to Absorption in II-VI Semiconductor Quantum
Wells A. Camacho, M. E. Ramirez, F. J. Rodriguez, L. Quiroga |
202-204 | Effects
of Periodic Gate Potentials on Quasi-1D Excitons G. H. Cocoletzi,S. E. Ulloa |
205-210 | Remarks
on the Role of Excitonic Renormalization in the Metal-Insulator Transition
M. A. Continentino, G. M. Japiassú, A. Troper |
211-213 | Local
Magnetoplasmon Modes of a Semiconductor Superlattice with Broken Translational
Symmetry J. C. Granada E. |
214-218 | Surface
Exciton Polariton Spectrum in Semiconductor Superlattices E. L. Albuquerque, P. Fulco |
219-221 | Polaron
Effects on Cyclotron Mass due to Interface and Slab Phonons in GaAs/AlGaAs
Quantum Wells Guo-Qiang Hai, N. Studart, F. M. Peeters |
222-224 | Extremely
Long Spin-Relaxation of Excitons Localized in GaAs/AlGaAs Coupled Quantum
Well Structures A. L. C. Triques, A. Vinattieri, M. Colocci, R. Ferreira, P. Roussignol |
225-228 | Electron-Hole
Recombination in GaAs: Si Superlattices in High Magnetic Fields A. B. Henriques, V. Bindilatti, N. F. Oliveira, Jr., D. Heiman |
229-233 | Effects
of Electric and Magnetic Fields on the 1s --->2p+
Donor Transitions in Quantum Wells F. J. Ribeiro, L. H. M. Barbosa, A. Latgé |
234-238 | Local
Field Optical Effects in Two-Dimensional Quantum Confined Structures A. V. Ghiner, G. I. Surdutovich |
239-244 | Light
and Thermal Excitation of Depolarization Current in Indirect Bandgap AlxGa1-xAs
L. V. A. Scalvi, L. Oliveira, M. Siu Li |
245-248 | Theory
of the Spin Relaxation of Photoexcited Carriers in Doped GaAs Quantum
Wells M. Z. Maialle |
249-251 | Room-Temperature
Photoluminescence Measurements in InP-InGaAs Single Asymmetric Quantum
Well A. J. C. Cardoso, P.C. Morais, H. M. Cox |
252-258 | New
Improved Technique to Measure Photoreflectance M. Pamplona Pires, P. L. Souza, J. P. von der Weid |
Growth and Characterization |
|
259-262 | Study
of Surface Kinetic Effects in the MBE Growth of III-V Compounds by RHEED
Analysis D. I. Lubyshev, P. P. Gonzalez-Borrero, E. Marega Jr, T. B. Lubysheva, N. La Scala Jr., P. Basmaji |
263-270 | Influence
of Surface Structure on Segregation and Alloy Properties in (100)- and
(311)-Oriented InGaAs/GaAs Heterostructures F. E. G. Guimarães, P. P. González-Borrero, D. Lubyshev, P. Basmaji |
Surfaces and Interfaces |
|
271-273 | Atomic
Structures of CdTe and CdSe (110) Surfaces K. Watari, J. L. A. Alves, A.C. Ferraz |
274-276 | CuInSe2:
Electronic States for the Ideal Surfaces (100) and (112) J. A. Rodríguez, L. Quiroga, A. Camacho, R. Baquero |
277-279 | The
Interaction of Atoms with GaAs[110] Surface using Local Softness Model
P. Piquini, A. Dal Pino Jr., A. Fazzio |
280-284 | Shear
Friction and Elastic Breakdown of Strained Layers M. R. Baldan, E. Granato |
Transport Properties |
|
285-288 | Investigations
of Electron Wave Interference and Quantum Chaos in Ballistic Quantum Dots
with Square Geometry J. P. Bird, K. Ishibashi, R. Newbury, D. M. Olatana, R. P. Taylor, Y. Ochiai, Y. Aoyagi, T. Sugano |
289-293 | Resonant
Tunneling of Electrons in Asymmetric Double Quantum Wells Under Crossed
Electric and Magnetic Fields M. A. R. Souza, V. A. Chitta |
294-297 | Magnetotunneling
Studies in a Pseudomorphic InGaAs/AlAs/GaAs Heterostructure Y. Galvão Gobato, J.M. Berroir, Y. Guldner, B. Vinter, J. Nagle, P. H. Rivera |
298-303 | Chaos
Induced by Magnetic Field in Asymmetric Double Barrier Resonant Tunneling
Structures F. Claro, P. Orellana, E. Anda |
304-307 | Analysis
of the Current-Voltage Characteristics Lineshapes of Resonant Tunneling
Diodes P. H. Rivera, P. A. Schulz |
308-312 | Local
Lattice Mode - Induced Far-Infrared Selective Photoconductivity in PbTe(Ga)
A. I. Belogorokhov, I. I. Ivanchik, D. R. Khokhlov, S. Ponomarev |
313-317 | 2D
Electron Transport in Selectively Doped GaAs/InxGa1-xAs
Multiple Quantum Well Structures V. A. Kulbachinskii, V. G. Kytin, T. S. Babushkina, I. G. Malkina |
318-322 | Electronic
Structures of Modulated Bidimensional Systems in the Presence of a Magnetic
Field M. A. Andrade Neto, P. A. Schulz |
323-326 | Combined
Effect ofImpurities and Phonon Scattering in the Magnetic Transport: Diffusive
Pole Approximation C. E. Leal, I. C. da Cunha Lima, M. R. Baldan, A. Troper |
327-332 | Sample
Parameters of Degenerate Semiconductor Superlattices A. B. Henriques, L. C. D. Gonçalves, P. L. de Souza, B. Yavich |
333-336 | Electron
Mobilities in Single and Double delta-Layers Guo-Qiang Hai, N. Studart |
337-340 | Self-Consistent
Calculation of the Electronic Properties of Quantum Well Wires S. A. Leão, M. H. Degani |
341-346 | Device
Noise as a Probe of Electron Motion in Quantum Dots at High Magnetic Fields
J. P. Bird, K. Ishibashi, Y. Aoyagi, T. Sugano |
Amorphous Materials and Defects |
|
347-352 | Bistable
Photogenerated Effects in Low Resistivity GaAs W. V. Machado, A. F. S. Landim, M. A. Amato |
353-358 | Nitrogen
Implantation Into Amorphous Carbon Films: SIMS and Positron Annihilation
Analyses F. L. Freire Jr., D. F. Franceschini, C. A. Achete, I. J. R. Baumvol, R. S. Brusa, G. Mariotto R. Canteri |
359-362 | Conductivity
and ESR Measurements on Carbon Rich Cathodic Amorphous Silicon Carbon
Alloys A. L. Baia Neto, F. Finger, S. S. Camargo Jr. |
363-368 | a-SixGe1-x:H
thin Films M. Mulato, I. Chambouleyron |
Heterostructures and Superlattices |
|
369-371 | Quantum
Size Effects and Localization Lengths in Disordered Heterostructures R. Rey-Gonzalez, P. A. Schulz |
372-375 | Far-Infrared-Study
of Shallow Etched Quantum Wires on High Mobility GaAs/AlGaAs Heterostructures
V. RolBkopf, E. Gornik, C. M. Engelhardt, G.Böhm, G. Weimann |
376-380 | Optical
Spectra of a Cantor Superlattice M. S. Vasconcelos, E. L. Albuquerque, A. M. Mariz |
381-387 | Stability
and Electronic Structure of Superlattices (IIIV)n/(IV2)N
D. Casagrande, A. C. Ferraz |
388-391 | Kinetic
Energy Operators and Electron Transmission in Nonabrupt Heterojunctions
J. Ribeiro Filho, G. A. Farias, V. N. Freire |
392-396 | Metastability
in Periodically delta-doped GaAs T. M. Schmidt, A. Fazzio |
Devices |
|
397-400 | Light-Induced
Degradation in a-Si:H P-I-N Solar Cells H. Paes Jr., W. Losch |
401-405 | Effects
of High Doses of Ionizing Radiation on Interface Properties of MOS Capacitors
E. A. de Vasconcelos, E. F. da Silva, Jr. |
406 | Characterization
of PbTe Epitaxial Layers Grown on BaF2/CaF2/Si
Structures C. Boschetti, E. Abramof, P. H. O. Rappl, I. N. Bandeira, P. Motisuke, M. A. Hayashi, L. P. Cardoso |